DDR5 SDRAM

        Advantages of Migrating to DDR5

        DDR5 is the next evolution in DRAM, bringing a robust list of new features geared to increase reliability, availability, and serviceability (RAS); reduce power; and dramatically improve performance. Some of the key feature differences between DDR4 and DDR5 are as follows:

        Feature/Option DDR4 DDR5 DDR5 Advantage
         Data rates  1600-3200 MT/s  3200-6400 MT/s  Increases performance and bandwidth
         VDD/VDDQ/VPP   1.2/1.2/2.5   1.1/1.1/1.8   Lowers power
         Internal VREF  VREFDQ  VREFDQ, VREFCA, VREFCS   Improves voltage margins, reduces BOM costs
         Device densities    2Gb-16Gb    8Gb-64Gb    Enables larger monolithic devices 
         Prefetch    8n   16n    Keeps the internal core clock low
         DQ receiver equalization   CTLE  DFE  Improves opening of the received DQ data
         eyes inside the DRAM
         Duty cycle adjustment (DCA)   None   DQS and DQ  Improves signaling on the transmitted DQ/DQS pins
         Internal DQS delay
         monitoring 
         None   DQS interval oscillator   Increases robustness against environmental changes 
         On-die ECC  None  128b+8b SEC, error check and scrub   Strengthens on-chip RAS
         CRC   Write   Read/Write    Strengthens system RAS by protecting read data 
         Bank groups (BG)/banks   4 BG x 4 banks (x4/x8)
         2 BG x 4 banks (x16)
         8 BG x 2 banks (8Gb x4/x8)
         4 BG x 2 banks (8Gb x16)
         8 BG x 4 banks (16-64Gb x4/x8)
         4 BG x 4 banks (16-64Gb x16) 
         Improves bandwidth/performance
         Command/address interface   ODT, CKE, ACT, RAS,
         CAS, WE, A<X:0>
         CA<13:0> 

         Dramatically reduces the CA pin count

         ODT  DQ, DQS, DM/DBI   DQ, DQS, DM, CA bus    Improves signal integrity, reduces  BOM costs 
         Burst length  BL8 (and BL4)   BL16, BL32
         (and BC8 OTF, BL32 OTF) 
         Allows 64B cache line fetch with only 1 DIMM subchannel. 
         MIR (“mirror” pin)   None  Yes  Improves DIMM signaling
         Bus inversion   Data bus inversion (DBI)  Command/address inversion (CAI)   Reduces VDDQ noise on modules
         CA training, CS training   None   CA training, CS training   Improves timing margin on CA and CS pins  
         Write leveling training modes   Yes  Improved  Compensates for unmatched DQ-DQS path
         Read training patterns   Possible with the MPR  Dedicated MRs for serial
         (userdefined), clock and LFSR
         -generated training patterns
         Makes read timing margin more robust
         Mode registers  7 x 17 bits  Up to 256 x 8 bits
         (LPDDR type read/write) 
         Provides room to expand
         PRECHARGE commands   All bank and per bank  All bank, per bank, and same bank   PREsb enables precharging-specific bank in each BG
         REFRESH commands   All bank   All bank and same bank  REFsb enables refreshing of specific bank in each BG
         Loopback mode  None   Yes  Enables testing of the DQ and DQS signaling 

        Featured Resources

        DDR5 SDRAM: New Features

        Get more detail about DDR5's improved performance, RAS and ease of implementation and see how it can help you meet the stringent requirements of next-generation systems and improve your total cost of ownership.

        DDR5: The Next Step in System Level Performance: Part II

        In this follow-up blog, I discuss, in a little more detail, some of the features on DDR5 that allow performance gains and scaling capability.

        DDR5: The next step in system level performance

        As CPU core counts continue to increase, bandwidth per core cannot continue to scale with DDR4. New memory architectures are required to meet next-generation bandwidth per core requirements in x86 CPUs. Enter DDR5.

        Micron leads the charge with DDR5 to improve the performance baseline for tomorrows applications

        Providing products and solutions with confidence is really about getting applications to higher bandwidths faster.
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